Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes

摘要

We have numerically studied microwave plasma discharge for the chemical vapor deposition of single-crystal diamond. It is experimentally confirmed that the arrangement of the seed substrate and local configurations affect the growth rate and macroscopic surface morphology. We found correspondences between experimentally observed growth rates/surface morphology and numerically predicted distributions of microwave power density/substrate temperature/gas flow. These correspondences are instructive information for designing improved reactors that can synthesize larger crystals with a higher quality more efficiently.