Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

Negative-bias temperature instability (NBTI) was investigated in advanced p-channel metal-oxide-semiconductor field-effect transistors fabricated with dual gate oxide thickness. Results indicate that the mobility degradation resulting from NBTI-induced interface state generation is significant in the device with an ultra thin gate oxide. Models to relate NBTI-induced threshold voltage shift and drain current (linear-region I_(dlin), and saturation-region I_(dsat)) degradation were established. According to the I_(dsat) degradation model, the impact of supply voltage on I_(dsat) degradation for a fixed amount of NBTI-induced damage can be predicted.