Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires

摘要

We report the optical properties of GaAs quantum dots embedded in (Al,Ga)As nanowires grown by the vapor-liquid-solid method. We used the micro-photoluminescence (PL) technique to observe PL peaks, which are assigned as exciton and biexciton emissions from single quantum dots. In addition, unusual features appear in the excitation power dependence of the energies and linewidths of the two PL peaks. The PL also depends on the optical polarization axis, indicating that the nanostructures have a highly asymmetrical shape. The results show that our method is a promising way of engineering the positions and optical properties of GaAs/(Al,Ga)As nanostructures.