Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal-Oxide-Semiconductor Field-Effect Transistor

摘要

We have investigated the AsH_3 and GeH_4 flow rate dependences of As concentration and growth rate for atmospheric in situ As-doped SiGe selective epitaxial growth. A high As concentration of 3.2 x 10~(19) atoms/cm~3 and a high growth rate of 13 nm/min were achieved for Si_(0.79)Ge_(0.21) selective epitaxial growth. The good selectivity was confirmed, and the epitaxial film showed high crystalline quality, a smooth surface and an abrupt change in the dopant profile at the interface. These results were interpreted in terms of the suppression of As surface segregation and the enhancement of As diffusion due to Ge incorporation in Si growth.