Electric Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces

摘要

High quality Si_3N_4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si_3N_4 film is three orders of magnitude smaller than that through the conventional SiO_2 film, and the interface states density at midgap for Si_3N_4/Si interface is less than 5 x 10~(10) eV~(-1) cm~(-2). High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si_3N_4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si_3N_4/Si interface.