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首页> 外文期刊>Japanese journal of applied physics >Temperature Dependence of Dielectric Constant of Nanoparticle Composite Porous Low-k Films Fabricated by Pulse Radio Frequency Discharge with Amplitude Modulation
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Temperature Dependence of Dielectric Constant of Nanoparticle Composite Porous Low-k Films Fabricated by Pulse Radio Frequency Discharge with Amplitude Modulation

机译:调幅脉冲射频放电制备纳米复合多孔低k薄膜介电常数的温度依赖性

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摘要

Nanoparticle composite porous low-k films are deposited by pulse radio frequency (RF) discharge with the amplitude modulation (AM) of discharge voltage. The deposition rate obtained with AM is 0.65 nm/s, which is sevenfold as high as that obtained without AM, and porosity = 60-63% and dielectric constant k = 1.1-1.4 for the films obtained with AM are nearly equal to those obtained without AM. The deposition of porous low-k films by pulse RF discharge with AM is a promising method for increasing the deposition rate with a less pronounced agglomeration and without variations in the properties of the films. With decreasing substrate temperature from 403 to 368 K, the porosity of the films increases from 3.5 to 60%, leading to a reduction in their dielectric constant from 2.9 to 1.4. Substrate temperature is a key parameter that determines the porosity and dielectric constant of the porous low-k films.
机译:通过脉冲射频(RF)放电和放电电压的幅度调制(AM)来沉积纳米颗粒复合多孔低k膜。使用AM获得的薄膜的沉积速率为0.65 nm / s,是不使用AM获得的沉积速率的七倍,孔隙率= 60-63%,介电常数k = 1.1-1.4几乎等于获得的薄膜没有AM。通过使用AM的脉冲RF放电进行多孔低k膜的沉积是一种有前途的方法,可以提高沉积速率,且团聚程度不那么明显,并且不会改变膜的性能。随着基板温度从403 K降低到368 K,薄膜的孔隙率从3.5%增加到60%,导致介电常数从2.9降低到1.4。基板温度是决定多孔低k膜的孔隙率和介电常数的关键参数。

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