Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma

摘要

The radical reaction based semiconductor manufacturing has been applied to silicon device process. Such as SiO_2 and can be formed at low temperatures of under 500-600℃. In this study, we applied radical reaction based semiconductor manufacturing to compo