Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

Kenichi ONO; Masayoshi TAKEMI

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Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

机译：金属有机气相外延生长GaAs衬底上InGaAsP层的异常光学特性研究

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We investigated the growth of InGaAsP layers on GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) for application in optical devices. Anomalous large redshifts of photoluminescence (PL) were observed for samples of specific In_(1-x)Ga_xAs_yP_(1-

机译：我们通过金属有机气相外延（MOVPE）研究了在GaAs衬底上InGaAsP层的生长，以用于光学器件。观察到特定In_（1-x）Ga_xAs_yP_（1-的样品的光致发光（PL）异常大红移

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《Japanese journal of applied physics》 |2008年第3issue1期|1484-1490|共7页
作者
Kenichi ONO; Masayoshi TAKEMI;
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正文语种 eng
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InGaAsP; MOVPE; miscibility gap; photoluminescence; phase separation;

机译：InGaAsP;MOVPE;相容性差距;光致发光相分离;

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1. Threading Dislocations and Phase Separation in InGaAs Layers on GaAs Substrates Grown by Low-Temperature Metalorganic Vapor Phase Epitaxy [J] . Yasushi Takano, Kazu Kobayashi, Hideaki Iwahori, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第9A期

机译：低温金属有机气相外延生长的GaAs衬底上InGaAs层中的螺纹位错和相分离
2. Characteristics of GaAsN/GaAsSb type-Ⅱ quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates [J] . A. A. Khandekar, B. E. Hawkins, T. F. Kuech, Journal of Applied Physics . 2005,第12期

机译：金属有机气相外延在GaAs衬底上生长的GaAsN /GaAsSbⅡ型量子阱的特性
3. Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy [J] . Pornsiri Kongjaeng, Sakuntam Sanorpim, Takahisa Yamamoto, Journal of Crystal Growth . 2007,第Jan期

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机译：金属有机气相外延生长Gasb和GaInsb层的特性

Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

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