机译:光化掩模空白检查和信号分析,可检测高度低至1.5 nm的相位缺陷
MIRAI-Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
MIRAI-Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
MIRAI-Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
MIRAI-Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
MIRAI-Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;
机译:通过光电子显微镜对EUVL掩模空白缺陷进行光化检查:检查波长变化的影响
机译:光电子显微镜观察光化性极紫外光刻掩模空白缺陷
机译:光电发射显微技术检测极紫外光刻多层掩模板的高分辨率光化缺陷
机译:检测关键阶段缺陷的活动暗场掩模空白检查和缺陷可印刷性分析 - (PPT)
机译:EUV掩模技术的主要挑战:光化掩模检测和掩模3D效果。
机译:超声相控阵检查用于近场缺陷的瞬时相干成像
机译:EUVL掩模空白缺陷对32-NM HP节点的可检测性和可打印性