Deep-Etched Photonic Crystal Laser Structure of InP-Based Asymmetric Multiple Quantum Wells

摘要

A photonic crystal (PhC) laser structure was fabricated on an InP substrate. The wafer consists of a p-i-n laser epitaxial structure using asymmetric InGaAs/lnGaAIAs multiple quantum wells as the active layer. The epistructure has a broadband electroluminescence spectrum centered at an optical wavelength (λ) = 1538nm with a 3dB bandwidth = 115nm. The deep-etched PhC laser structure was achieved by inductively coupled plasma dry etching using a Cl_2 + SiCl_4 + CH_4 mixture. The room-temperature optical spectrum of the PhC laser structure shows three sharp emission peaks at λ = 1505, 1535, and 1551 nm, which correspond to the resonant modes of the PhC.