首页> 外国专利> HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION

HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION

机译:具有有源光子晶体结构的高功率量子级联激光,用于单相模式操作

摘要

Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 µm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a nonuniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
机译:提供了能够发射中至长波长红外(即4-12μm)辐射的半导体激光阵列器件。所述装置包括量子级联激光器(QCL)结构,该结构包括一个或多个有源核。光学限制结构;一个包层结构,和多个横向间隔开的沟槽区域,这些沟槽区域横向延伸穿过包层和光学限制结构,并部分地进入QCL结构。沟槽区域限定由激光器阵列器件中的元件区域隔开的多个横向间隔的元件间区域。元件区域的特征在于在其宽度上的不均匀结构。由于这种结构上的不均匀性,相对于由元件区域的耦合的基本横向模式组成的阵列模式,优先抑制了由元件区域的耦合的一阶横向模式组成的阵列模式。

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