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HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION
HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION
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机译:具有有源光子晶体结构的高功率量子级联激光,用于单相模式操作
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摘要
Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 µm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a nonuniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
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