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首页> 外文期刊>Japanese journal of applied physics >Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning
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Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning

机译：通过表面构图提高蓝色半极性（1011）氮化物基发光二极管的光提取效率

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摘要

To enhance light extraction from a blue semipolar (1011) multiple-quantum-well light emitting diode (LED), surface patterning was performed on the backside of a GaN substrate on which LED epitaxial layers had previously been grown. After circular photoresist etching masks were defined, the surface was patterned with conical features by inductively-coupled plasma (ICP) etching. A substantial increase (100% before packaging and 33% after) in output power was observed in comparison with a reference sample which had a smooth backside at a drive current of 20 mA. Since ICP etching is a non-equilibrium process, this technique can potentially be applied to LEDs grown on nonpolar m- or a-plane GaN substrates.
机译：为了增强从蓝色半极性（1011）多量子阱发光二极管（LED）的光提取，在之前已生长有LED外延层的GaN衬底的背面进行了表面构图。定义圆形光致抗蚀剂蚀刻掩模后，通过感应耦合等离子体（ICP）蚀刻对表面进行圆锥形图案化。与在20 mA的驱动电流下具有平滑背面的参考样品相比，观察到输出功率的大幅增加（包装前为100％，包装后为33％）。由于ICP蚀刻是一种非平衡工艺，因此该技术可以潜在地应用于在非极性m或a平面GaN衬底上生长的LED。

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  • 来源
    《Japanese journal of applied physics》 |2009年第3issue1期|1-3|共3页
  • 作者

    Hong Zhong; Anurag Tyagi; Nathan Pfaff; Makoto Saito; Kenji Fujito; James S. Speck; Steven P. DenBaars; Shuji Nakamura;

  • 作者单位

    Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan;

    Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

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