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机译:使用应力记忆技术评估纳米级n沟道金属氧化物半导体场效应晶体管的界面特性和DC特性增强
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center,Center for Micro/Nano Science and Technology, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan 701, Taiwan, R.O.C.;
rnDepartment of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.;
rnInstitute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center,Center for Micro/Nano Science and Technology, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan 701, Taiwan, R.O.C.;
rnInstitute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center,Center for Micro/Nano Science and Technology, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan 701, Taiwan, R.O.C.;
rnInstitute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center,Center for Micro/Nano Science and Technology, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan 701, Taiwan, R.O.C.;
rnInstitute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center,Center for Micro/Nano Science and Technology, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan 701, Taiwan, R.O.C.;
rnCentral R&D Division, United Microelectronics Corporation, Tainan 741, Taiwan, R.O.C.;
rnCentral R&D Division, United Microelectronics Corporation, Tainan 741, Taiwan, R.O.C.;
机译:动态应力对在互补金属氧化物半导体逆变器中在高温下工作的带有SiON栅极电介质的纳米级n沟道金属氧化物半导体场效应晶体管可靠性的影响
机译:应力记忆技术引起的拉伸应变对n沟道金属氧化物半导体晶体管中低频噪声的影响
机译:应力记忆技术引起的拉伸应变对n沟道金属氧化物半导体晶体管中低频噪声的影响
机译:用于N沟道镓砷化物金属氧化物 - 半导体场效应晶体管的原位表面钝化和金属栅/高k电介质叠层形成
机译:通过接口工程提高有机场效应晶体管的电性能
机译:使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
机译:用于背面氩轰击的氮化n沟道金属氧化物半导体场效应晶体管的界面和电荷俘获特性研究
机译:在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。 (重新公布新的可用性信息)