Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and drain

摘要

A novel band-gap engineered source and drain floating body cell (BESD-FBC) for capacitorless dynamic random access memory (DRAM) Cell is proposed and investigated for the first time. The energy band offset with silicon-carbon source and drain can help to form a deeper potential well in the body region, which can effectively store more holes. Compared with normal FBC, BESD-FBC can obtain larger sensing margin and longer retention time due to more stored holes and small hole leakage current. These improvements show that the proposed BESD-FBC has great potentials for future high density capacitorless DRAM application.