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首页> 外文期刊>Japanese journal of applied physics >DC-DC Converters Using Indium Gallium Zinc Oxide Thin Film Transistors for Mobile Display Applications
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DC-DC Converters Using Indium Gallium Zinc Oxide Thin Film Transistors for Mobile Display Applications

机译:使用铟镓锌氧化物薄膜晶体管的DC-DC转换器在移动显示应用中的应用

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摘要

DC-DC converters integrated into a panel are proposed for mobile display applications using indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The proposed positive DC-DC converter uses cross-coupled and diode-connected structures for a high output voltage and a high power efficiency, while the proposed negative DC-DC converter uses also a cross-coupled structure but with separated pumping capacitors for a negative output voltage and a high power efficiency. The simulated results show that the output voltage and power efficiency are 21.3 V and 69.5% for the positive DC-DC converter and -5.1 V and 56.1% for the negative DC-DC converter, respectively, at a supply voltage of 10 V and a load current of 250 μA. The measured results show that the output voltage and power efficiency of the proposed positive DC-DC converter are 20.8V and 66.6%, respectively, under the same conditions as those for the simulated results.
机译:提议将集成到面板中的DC-DC转换器用于使用铟镓锌氧化物(IGZO)薄膜晶体管(TFT)的移动显示应用。提出的正DC-DC转换器使用交叉耦合和二极管连接的结构以实现高输出电压和高功率效率,而提出的负DC-DC转换器也使用交叉耦合的结构但具有分离的泵浦电容器来获得负的输出电压和高功率效率。仿真结果表明,在电源电压为10 V时,正DC-DC转换器的输出电压和功率效率分别为21.3 V和69.5%,负DC-DC转换器的输出电压和功率效率分别为-5.1 V和56.1%。负载电流为250μA。测量结果表明,在与模拟结果相同的条件下,所提出的正DC-DC转换器的输出电压和功率效率分别为20.8V和66.6%。

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  • 来源
    《Japanese journal of applied physics》 |2010年第3issue2期|p.03CB05.1-03CB05.5|共5页
  • 作者单位

    Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    rnDivision of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    rnDivision of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    rnDivision of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    rnDivision of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea;

    rnTransparent Electronics Team, Electronics and Telecommunications Research Institute, 138 Gajeongno, Yuseong-gu, Daejeon 305-700, Korea;

    rnTransparent Electronics Team, Electronics and Telecommunications Research Institute, 138 Gajeongno, Yuseong-gu, Daejeon 305-700, Korea;

    rnTransparent Electronics Team, Electronics and Telecommunications Research Institute, 138 Gajeongno, Yuseong-gu, Daejeon 305-700, Korea;

    rnTransparent Electronics Team, Electronics and Telecommunications Research Institute, 138 Gajeongno, Yuseong-gu, Daejeon 305-700, Korea;

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