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机译:裂纹引发缺陷的密度对Si(111)衬底上GaN膜的裂纹间距的影响
Department of Materials Science and Engineering, Korea University, 5 Anam-dong, Seongbuk-gu, Seoul 136-713, Korea;
Department of Materials Science and Engineering, Korea University, 5 Anam-dong, Seongbuk-gu, Seoul 136-713, Korea;
LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea;
LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea;
LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea;
LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea;
Proton Engineering Frontier Project, Korea Atomic Energy Research Institute, 150-1 Deokjin-dong, 1045 Daedeokdaero, Yuseong, Daejeon 305-353, Korea;
LED Device Team, Korea Photonics Technology Institute, 5 Cheomdan 4-gil, Buk-gu, Kwangjoo 500-779, Korea;
机译:在硅(111)衬底上应变控制生长的低缺陷密度无裂纹GaN
机译:使用Si_xN_y插入层在Si(111)衬底上生长无裂纹GaN膜并提高晶体质量
机译:通过使用富铝AlN缓冲层在Si(111)衬底上生长无裂纹GaN膜
机译:AlN缓冲层生长对(111)Si基材沉积的AlGaN / GaN膜的影响
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:在(111)3C-SIC上生长的外延ALN / GAN薄膜缺陷结构研究
机译:等离子体辅助金属有机化学气相沉积法在Si(111)衬底上生长AlxGa1-xN / GaN异质结构薄膜的微观结构和光学性质
机译:新型碳化钽(TaC)衬底上低缺陷密度氮化镓(GaN)薄膜的生长,提高器件性能