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Effect of Electron Density on Extreme Ultraviolet Output of a Z-Pinch Xe Discharge Produced Plasma Source

机译:电子密度对Z-Pinch Xe放电等离子体源极紫外输出的影响

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摘要

The extreme ultraviolet (EUV) source has many applications, including EUV lithography, EUV diagnostics, and so on. Numerous research groups have developed many EUV light sources and studied their characteristics. In this paper, we measured the temporal EUV emission of a Xe discharge produced plasma (DPP) EUV source and later, attempted to clarify the relationship between electron density evolution and EUV emission. The maximum EUV emission occurred at the optimum electron density of about 10~(19) cm~(-3). A preliminarily discussion of the relationship between EUV radiation and electron density evolution based on these experimental results is presented.
机译:极紫外(EUV)光源具有许多应用,包括EUV光刻,EUV诊断等。许多研究小组已经开发了许多EUV光源并研究了它们的特性。在本文中,我们测量了Xe放电产生的等离子体(DPP)EUV源的时间EUV发射,随后试图阐明电子密度演化与EUV发射之间的关系。最大EUV发射发生在约10〜(19)cm〜(-3)的最佳电子密度下。根据这些实验结果,初步讨论了EUV辐射与电子密度演变之间的关系。

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  • 来源
    《Japanese journal of applied physics》 |2011年第6issue2期|p.06GB09.1-06GB09.4|共4页
  • 作者单位

    Department of Energy Sciences, Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology, Yokohama 226-8502, Japan;

    Department of Energy Sciences, Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology, Yokohama 226-8502, Japan;

    Department of Energy Sciences, Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology, Yokohama 226-8502, Japan;

    Department of Energy Sciences, Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology, Yokohama 226-8502, Japan;

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