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Nonlinear Behavior of Decrease in Reflectivity of Multilayer Mirrors for Extreme Ultraviolet Lithography Optics by High-Flux Extreme Ultraviolet Irradiation in Various Vacuum Environments

机译:在不同真空环境下,高通量极紫外光照射下,极紫外光刻光学多层反射镜反射率的非线性行为

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摘要

To estimate the optics lifetime of an extreme ultraviolet lithography (EUVL) system with a contaminated mirror surface, it is indispensable to carry out an acceleration test using high-flux EUV irradiation. In this study, Mo/Si multilayer mirrors were irradiated in various vacuum environments using a contamination evaluation system with an undulator light source, and changes in their reflectivity were evaluated. The dependence of the decrease in reflectivity per unit dose on the EUV irradiance was observed in high-flux irradiation experiments in vacuum with water vapor or n-decane gas introduction at pressures lower than about 10~5 Pa. The irradiance dependence disappeared when the pressures were increased for both water vapor and decane gas. A reflectivity distribution with a doughnut shape, namely, high at the irradiation center, low in the surrounding area, and high in the non-irradiated area, was observed in the irradiation experiments during the simultaneous introduction of water vapor and decane gas. These results can be generally explained by the mechanism of the supply-controlled limit.
机译:为了估算镜面被污染的极紫外光刻(EUVL)系统的光学寿命,使用高通量EUV辐射进行加速测试是必不可少的。在这项研究中,使用带有波动光源的污染评估系统在各种真空环境中辐照了Mo / Si多层反射镜,并评估了其反射率的变化。在高通量辐照实验中,在低于10〜5 Pa的压力下引入水蒸气或正癸烷气体,在高通量辐照实验中观察到单位剂量反射率降低对EUV辐照度的依赖性。水蒸气和癸烷气体的含量都增加了。在同时引入水蒸气和癸烷气体的辐照实验中,观察到了甜甜圈形状的反射率分布,即在辐照中心处较高,在周围区域中较低,在未辐照区域中较高。这些结果通常可以通过供应限制的机制来解释。

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  • 来源
    《Japanese journal of applied physics》 |2011年第6issue2期|p.06GB05.1-06GB05.6|共6页
  • 作者单位

    Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678.1205, Japan;

    Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678.1205, Japan,Precision Equipment Company, Nikon Corporation, Sagamihara 228-0828, Japan;

    Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678.1205, Japan,Precision Equipment Company, Nikon Corporation, Sagamihara 228-0828, Japan;

    Nanotechnotogy Development Center, Canon Inc., Utsunomiya 321-3298, Japan;

    Nanotechnotogy Development Center, Canon Inc., Utsunomiya 321-3298, Japan;

    Nanotechnotogy Development Center, Canon Inc., Utsunomiya 321-3298, Japan;

    Nanotechnotogy Development Center, Canon Inc., Utsunomiya 321-3298, Japan;

    Precision Equipment Company, Nikon Corporation, Sagamihara 228-0828, Japan;

    Precision Equipment Company, Nikon Corporation, Sagamihara 228-0828, Japan;

    Precision Equipment Company, Nikon Corporation, Sagamihara 228-0828, Japan;

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