Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-k Films

摘要

Highly selective dry-etching processes are developed for conventional via-first (VF) pattering sequences to fabricate reliable Cu dual-damascene interconnects (DDI) in carbon-rich low-k films, such as a molecular-pore-stack (MPS) SiOCH film (k = 2.55). The carbon-rich MPS film, which had excellent endurance against plasma-processes, acted as etching stopper during hard-mask (HM)-etching on it, and the high selectivity of trench-HM etching reduced variability of over-etching depth in the MPS film. This effect reduced variability in trench-depth in the MPS film, or interconnect characteristics such as capacitance-resistance (C-R) time delay. The via yield and reliability were influenced also by via-etch selectivity of MPS against SiCN cap underlain. We found that the SiCN thickness remained after the via etch should be greater than 10nm to prevent Cu from oxidation by O_2 ashing step followed. Chemical-reaction-enhanced gas chemistry in N_2-CFx-Ar system, i.e., high N_2/Ar ratio under limited CF_x supply, increased the etching selectivity of MPS to keep enough thickness of SiCN. Early-failure-mode in electro-migration test was suppressed by the high selective via-etch. Precise selectivity control for robust carbon-rich low-k films was very important to achieve the low variability and high reliability of scaled-down Cu interconnects.