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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >Super Smooth Modification of AI_2O_3 Ceramic Substrate by High Temperature Glaze of CaO-AI_2O_3-SiO_2 System
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Super Smooth Modification of AI_2O_3 Ceramic Substrate by High Temperature Glaze of CaO-AI_2O_3-SiO_2 System

机译：CaO-AI_2O_3-SiO_2体系的高温釉对AI_2O_3陶瓷基底的超光滑改性

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摘要

The rough surface of ceramic substrate is an obstacle for the scale down of line-width for thin film passive integrated devices (PID). In this paper, a modification method for AI_2O_3 ceramic substrate with super smooth in surface was proposed. Coating a layer of CaO-AI_2O_3-SiO_2 (CAS) glass was performed to flat the rough surface of alumina substrate by sol-gel method. It was found that addition of 0.06% V_2O_5 can inhibit the recrystallization of the glaze. The root-mean-square (RMS) roughness of the glazed substrates reached a surprising flatness as small as 0.5 nm, and its melting temperature is higher than 1300℃. This substrate with super flatness and high temperature endurance may be promising for high performance thin film devices.
机译：陶瓷基板的粗糙表面是缩小薄膜无源集成器件（PID）的线宽的障碍。提出了一种表面光滑的Al_2O_3陶瓷基体的改性方法。通过溶胶-凝胶法涂覆一层CaO-Al_2O_3-SiO_2（CAS）玻璃以平整氧化铝基板的粗糙表面。发现添加0.06％的V_2O_5可以抑制釉料的重结晶。釉面基板的均方根粗糙度达到令人惊讶的平坦度，仅为0.5 nm，并且其熔融温度高于1300℃。这种具有超平整度和高温耐久性的衬底对于高性能薄膜器件可能是有希望的。

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  • 来源
    《Japanese journal of applied physics.Part 1.Regular papers & short notes》 |2011年第1issue1期|p.015803.1-015803.4|共4页
  • 作者

    Jihua Zhang; Shanxue Zhen; Lijun Yang; Feizhi Lou; Hongwei Chen; Chuanren Yang;

  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China;

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