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首页> 外文期刊>Applied Surface Science >Microstructure and dielectric properties of (Ba_(0.6)Sr_(0.4)TiO_3 thin films grown on super smooth glazed-Al-2O_3 ceramics subzstrate
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Microstructure and dielectric properties of (Ba_(0.6)Sr_(0.4)TiO_3 thin films grown on super smooth glazed-Al-2O_3 ceramics subzstrate

机译：在超光滑釉面Al-2O_3陶瓷基底上生长的（Ba_（0.6）Sr_（0.4）TiO_3薄膜的微观结构和介电性能

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摘要

Modified substrates with nanometer scale smooth surface were obtained via coating a layer of CaO-Al_2O_3-SiO_2 (CaAISi) high temperature glaze with proper additives on the rough-95% Al_2O_3 ceramics substrates. (Ba_(0.6)Sr_(0.4)TiO_3(BST) thin films were deposited on modified Al_2O_3 substrates by radio-frequency magnetron sputtering. The microstructure, dielectric, and insulating properties of BST thin films grown on glazed-Al_2O_3 substrates were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric properties measurement. These results showed that microstructure and dielectric properties of BST thin films grown on glazed-Al_2O_3 substrates were almost consistent with that of BST thin films grown on LaAl_2O_3 (10 0) single-crystal substrates. Thus, the expensive single-crystal substrates may be substituted by extremely cheap glazed-Al_2O_3 substrates.
机译：通过在粗糙的95％Al_2O_3陶瓷基底上涂覆一层CaO-Al_2O_3-SiO_2（CaAlSi）高温釉，并添加适当的添加剂，可以得到具有纳米级光滑表面的改性基底。 （Ba_（0.6）Sr_（0.4）TiO_3（BST）薄膜通过射频磁控溅射沉积在改性的Al_2O_3衬底上.X射线研究了在玻璃化Al_2O_3衬底上生长的BST薄膜的微观结构，介电和绝缘性能。射线衍射（XRD），原子力显微镜（AFM）和介电性能测量。这些结果表明，在釉面Al_2O_3衬底上生长的BST薄膜的微观结构和介电性能与在LaAl_2O_3上生长的BST薄膜的微观结构和介电性能几乎一致（ 10 0）单晶衬底，因此，昂贵的单晶衬底可以用非常便宜的釉面Al_2O_3衬底代替。

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  • 来源
    《Applied Surface Science》 |2011年第4期|p.1510-1513|共4页
  • 作者

    Hongwei Chen; Chuanren Yang; Shanxue Zheng; Jihua Zhang; Qiaozhen Zhang; Guanhuan Lei; Feizhi Lou; Lijun Yang;

  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, PR China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, PR China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, PR China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, PR China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, PR China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, PR China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, PR China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    glazed-Al_2O_3 substrate; barium strontium titanate; ferroelectric thin film; electrical property;

    机译：釉面的Al_2O_3基板;钛酸锶锶钡;铁电薄膜电性能;
  • 入库时间 2022-08-18 03:07:11

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