Effect of H_2S Annealing on Sb-Doped Cu-In-S Thin Films Prepared by Vacuum Evaporation

摘要

We investigated the effect of H_2S annealing on Sb-doped Cu-In-S thin films prepared using a vacuum evaporation method. These CuInS_2 thin films were grown successfully when annealed above 350℃ in H_2S atmosphere. It was found that the thin films were closer to stoichiometry at lower annealing temperatures compared with the undoped thin films. The carrier concentrations, resistivities and mobilities of Sb-doped thin films annealed at 400 ℃ were approximately 1 × 10~(18) cm~(-3), 30 Ωcm, and 1 cm~2 V~(-1) s~(-1) respectively.