Fundamental Properties of Titanium-Doped Indium Oxide and Its Application to Thin-Film Silicon Solar Cells

摘要

We have investigated the fundamental optoelectronic properties of newly developed transparent conductive oxide (TCO) materials, e.g., titanium-doped indium oxide (InTiO). InTiO films, being deposited at 50℃ by the RF-magnetron-sputtering method followed by thermal annealing at 200℃, show excellent optoelectronic properties for solar-cell application. We have demonstrated the improved photovoltaic performance of n-i-p microcrystalline-silicon ((μc-Si:H) solar cells whose I layer is prepared at a high rate of 2.3 nm/s using a stacked structure of InTiO with aluminum-doped zinc oxide (AZO) as top (front) TCO layers.