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机译:氢化物气相外延生长a面GaN厚膜的简单生长方法
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
机译:金属有机气相外延与氢化物气相外延相结合,在r面蓝宝石上生长a面GaN薄膜
机译:氢化物气相外延生长高质量和自分离的GaN厚膜
机译:使用和不使用TiN中间层的a面GaN模板上的a面GaN氢化物气相外延
机译:氢化物气相外延生长的平面GaN薄膜脱位和堆垛机构的机制
机译:用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
机译:氢化物与金属有机气相外延复合生长GaN薄膜的裂纹研究
机译:氢化物气相外延法GaN膜的生长与性能。