High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature

摘要

This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In_2O_3) TFTs prepared using different annealing temperatures. Even though the a-In_2O_3 TFTs were annealed at 200℃, electrical characteristics of aqueous solution-processed a-In_3C＞3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm~2 V~(-1) s~(-1) and an on/off current ratio of over 10~6 was exhibited by a-In_2O_3 TFTs annealed at 250℃.