Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

摘要

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 degrees C to 300 degrees C. Using a volatile nitrate precursor, we were able to fabricate TFTs with excellent device performance within this annealing temperature range. Amorphous In2O3 films could be obtained by carefully controlling the film thickness and annealing temperature. TFTs based on amorphous In2O3 channel layers with an average mobility as high as 7.5 cm(2) V-1 s(-1), an I-on/I-off ratio of 10(7), and V-on = -5 V could be fabricated at 300 degrees C annealing temperature in air. The devices prepared at 200 degrees C still exhibit transistor characteristics with an average mobility of 0.04 cm(2) V-1 s(-1), an Ion/Ioff ratio of 10(5), and V-on = 0 V. The temperature effects on the device performances are elucidated based on X-ray photoelectron spectroscopy and thermal gravimetric analysis characterization results of precursors and the resulting amorphous In2O3 thin films.