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Growth and Characterization of AIGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources

机译:用于深紫外光源的电子束靶AIGaN多量子阱的生长和表征

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The structure of Si-doped AIGaN multiple quantum well (MQW) targets has been optimized for application to electron-beam (EB)-pumped deep-ultraviolet (UV) light sources. The deep-UV light emission from Si-doped AIGaN MQW targets pumped by a 10kV EB has been evaluated. The targets exhibited a deep-UV light output power of over 15 mW at a peak wavelength of 256 nm for an EB input power of 2.0 W, and the conversion efficiency was estimated to be over 0.75%. These results demonstrate the advantageousness of using p-type-AIGaN-free AIGaN MQW targets as a material for application to EB-pumped deep-UV light sources.
机译:硅掺杂的AIGaN多量子阱(MQW)靶的结构已优化,可应用于电子束(EB)泵浦的深紫外(UV)光源。已经评估了由10kV EB泵浦的掺Si的AIGaN MQW靶发出的深紫外光。在EB输入功率为2.0 W的情况下,目标在256 nm的峰值波长处显示超过15 mW的深紫外光输出功率,并且转换效率估计超过0.75%。这些结果证明了使用不含p型AIGaN的AIGaN MQW靶材作为用于EB泵浦深紫外光源的材料的优势。

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  • 来源
    《Japanese journal of applied physics》 |2013年第1issue2期|01AF03.1-01AF03.3|共3页
  • 作者单位

    Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan,Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan;

    Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;

    Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;

    Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;

    Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan;

    Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan;

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