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首页> 外文期刊>Applied physics express >Marked Enhancement in the Efficiency of Deep-Ultraviolet AIGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
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Marked Enhancement in the Efficiency of Deep-Ultraviolet AIGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

机译：通过使用多量子势垒电子阻挡层，深紫外AIGaN发光二极管的效率显着提高

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摘要

We demonstrated high-efficiency 250-262 nm deep-ultraviolet (DUV) AlGaN multi-quantum well (MQW) light-emitting diodes (LEDs) fabricated on AIN/sapphire templates by introducing multiquantum-barrier (MQB) electron-blocking layers (EBLs). A marked enhancement in efficiency, by as much as 2.7 times, was observed for a 250 nm AlGaN LED by replacing the usual "single-barrier" EBL with a MQB-EBL. The maximum external quantum efficiencies and output powers of LEDs with MQB-EBLs measured under room temperature (RT) cw operation were 1.18% and 4.8 mW, and 1.54% and 10.4mW, for the 250 nm and 262 nm LEDs, respectively, which are the highest values ever reported.
机译：我们通过引入多量子势垒（MQB）电子阻挡层（EBL）展示了在AIN /蓝宝石模板上制造的高效250-262 nm深紫外（DUV）AlGaN多量子阱（MQW）发光二极管（LED） ）。通过用MQB-EBL代替通常的“单势垒” EBL，对于250 nm AlGaN LED观察到效率显着提高了2.7倍。对于250 nm和262 nm LED，在室温（RT）cw操作下测得的具有MQB-EBL的LED的最大外部量子效率和输出功率分别为1.18％和4.8 mW，以及1.54％和10.4mW。报告的最高值。

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  • 来源
    《Applied physics express》 |2010年第3期|p.031002.1-031002.3|共3页
  • 作者

    Hideki Hirayama; Yusuke Tsukada; Tetsutoshi Maeda; Norihiko Kamata;

  • 作者单位

    RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

    rnRIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan Saitama University, 255 Shimo-Okubo, Sakura, Saitama 388-8570, Japan CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

    rnRIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

    rnSaitama University, 255 Shimo-Okubo, Sakura, Saitama 388-8570, Japan CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

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