Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

摘要

InN hexagonal monocrystalline films were grown on yttria-stabilized zirconia (YSZ) (111) and AI_2O_3(0001) by the organometallic vapor phase epitaxy method with nitrogen activation in the electron cyclotron resonance discharge, supported by gyrotron radiation. The film growth rate reached 10 μm/h. In this paper, we present data on the morphology, structure, and photoluminescence properties of the grown films.