机译:铝靶射频功率溅射制备掺铝ZnO薄膜的光电子能谱和光学性质
Department of Mechanical Engineering, National Central University, Jhongli, Taoyuan 32001, Taiwan, R.O.C.;
Department of Mechanical Engineering, National Central University, Jhongli, Taoyuan 32001, Taiwan, R.O.C.,Institute of Materials Science and Engineering, National Central University, Jhongli, Taoyuan 32001, Taiwan, R.O.C.;
Institute of Materials Science and Engineering, National Central University, Jhongli, Taoyuan 32001, Taiwan, R.O.C.;
Laboratoire de Nanotechnologies et d'lnstrumentation Optique, ICD, CNRS Universite de Technologie de Troyes, 10004 Troyes Cedex, France;
机译:衬底对射频磁控溅射制备的掺铝ZnO薄膜结构,电学和光学性质的影响
机译:通过射频磁控旋转系统制备的Al掺杂ZnO透明导电膜的电气和光学性质
机译:Ar:H 2 sub>气体射频磁控溅射系统溅射Al掺杂ZnO薄膜的电学和光学性质
机译:通过射频磁控溅射沉积的Al掺杂ZnO薄膜的显微照片和光学性质
机译:射频磁控溅射砷化镓薄膜的光学表征。
机译:射频直流和射频叠加直流磁控溅射沉积的透明导电掺铝ZnO多晶薄膜的载流子输运和晶体学取向特征
机译:射频环形磁化放电的空间结构 溅射等离子体采用两个面对的ZnO / al2O3圆柱靶 al掺杂ZnO薄膜的制备