The Electrical and Optical Properties of Al-Doped ZnO Films Sputtered in an Ar:H₂ Gas Radio Frequency Magnetron Sputtering System

摘要

Al-doped ZnO (AZO) films were prepared by an Ar: gas radio frequency (RF) magnetron sputtering system with a AZO ( ) ceramic target at the low temperature of and annealed in hydrogen ambient at the temperature of . To investigate the influence of the flow ratio on the properties of the AZO films, the flow ratio was changed from 0.5% to 2%. As a result, the AZO films, deposited with a 1% addition, showed a resistivity of . When the AZO films were annealed at for 1 hour in a hydrogen atmosphere, the resistivity decreased from to . The lowest resistivity of was obtained by adding 1% hydrogen gas to the deposition and annealing process. The X-ray diffraction patterns of all the films showed a preferable growth orientation in the (002) plane. The spectrophotometer measurements showed that the transmittance of 85% was obtained by the film deposited with the flow ratio of 1% at 940 nm for GaAs/GaAlAs LEDs.