Through silicon via filling methods with metal/polymer composite for three-dimensional LSI

摘要

The novel use of metal/polymer composite can be a new candidate for filling through silicon vias (TSV) for three-dimensional (3D) LSI, as it provides a much faster and inexpensive fabrication process compared to copper electroplating. In this study, different process methods have been tested in order to optimize TSV filling with Ag/polypyrrole composite. All together nine method set-ups have been examined to analyse their average filling ratios. The statistical analysis of the techniques showed that the masking and scratching in vacuum environment proved to be the most effective, in average up to 98% filling ratio could be reached within 5 min. The technological differences of the two techniques to remove the additional deposited composite material on the surface caused by the wet dipping in aspect of the resulting via fillings are also detailed in this paper. The use of these techniques can contribute to improve through-put for production of 3D-LSI with metal/polymer composites.