Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime

摘要

Forward characteristics of ultrahigh-voltage 4H-SiC p-i-n diodes having four different n(-)-layer (i-layer) thicknesses from 48 to 198 mu m were investigated in the temperature range from room temperature to 573 K. After enhancement of carrier lifetimes in i-layers, nearly ideal forward characteristics (differential on-resistance = 1.1-5.5 m Omega cm(2) at 100A/cm(2)) were obtained at room temperature. The forward voltage drop decreased with temperature, which is consistent with the temperature dependence of junction voltage. The differential on-resistance exhibited a slight increase at elevated temperatures, which can mainly be ascribed to the increase in substrate resistance. (C) 2015 The Japan Society of Applied Physics