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机译:超高压SiC PiN二极管,具有改进的结终止扩展结构和更长的载流子寿命
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;
机译:用于4H-SiC中超高压p-i-n二极管的空间调制结终端扩展
机译:超高电压(> 20 kV)SiC PiN二极管,具有空间调制JTE和通过热氧化提高寿命的过程
机译:具有空间调制结终端扩展的21.7kV 4H-SiC PiN二极管
机译:具有浮动保护环和中间环的蚀刻结终端扩展,用于超高压4H-SiC PiN二极管
机译:结局终端结构的二维器件模拟确定击穿行为的确定
机译:通过SiCN / SiC超晶格结构增强Si纳米晶体发光二极管的电子传输和发光效率
机译:高压4H-SiC PiN二极管结终端结构的仿真和实验研究