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机译:具有Al2O3,AlN和Al2O3 / AlN叠层电介质的AlGaN / GaN金属-绝缘体-半导体异质结构中界面电荷和体电荷的比较研究
Xidian Univ, State Key Discipline Lab Wide Bandgap Semicond Te, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China;
Xidian Univ, State Key Discipline Lab Wide Bandgap Semicond Te, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China;
Xidian Univ, State Key Discipline Lab Wide Bandgap Semicond Te, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China;
Xidian Univ, State Key Discipline Lab Wide Bandgap Semicond Te, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China;
Xidian Univ, State Key Discipline Lab Wide Bandgap Semicond Te, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China;
Xidian Univ, State Key Discipline Lab Wide Bandgap Semicond Te, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China;
机译:Al_2O_3 / AlN / AlGaN / GaN金属-绝缘体-半导体异质结构中界面俘获截面的俘获截面对活化能的指数依赖性
机译:NbAlO / Al2O3叠层电介质通过原子紫菜沉积制备的AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管
机译:MBE AlGaN / GaN Hemt异质结构,并在Al2O3上进行了优化的ALN缓冲液
机译:PEALD诱导的AlNO / AlGaN / GaN MIS二极管的界面工程以及在Al2O3中交替插入AlN
机译:块状AlN单晶衬底上的富铝AlGaN和AlN生长
机译:X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
机译:AlN生长温度对原位金属有机化学气相沉积生长AlN / AlGaN / GaN金属-绝缘体-半导体异质结构场效应晶体管的陷阱密度的影响