150 A SiC V-groove trench gate MOSFET with 6 x 6 mm(2) chip size on a 150 mm C-face in-house epitaxial wafer

摘要

We report the successful demonstration of large current and high-speed switching properties of SiC V-groove trench gate MOSFETs (VMOSFETs). A drain current of 150 A (at V-DS = 2 V and V-GS = 18 V) and breakdown voltage of 960 V were achieved from a packaged 6 x 6 mm(2) single chip. Moreover, short switching times of t(r) = 81 ns and t(f) = 32 ns were also obtained. To fabricate such VMOSFETs with high yield, highly uniform in-house epitaxial growth technology on a 150-mm-diameter wafer is also one of the keys, owing to its characteristic dependence on drift layer carrier concentration. (C) 2016 The Japan Society of Applied Physics