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机译:氟注入对汽车微控制器单元输入/输出设备负偏压温度不稳定性影响的再研究
Renesas Elect Corp, Device Technol Div, Adv Device Technol Dept, Hitachinaka, Ibaraki 3128504, Japan;
Renesas Elect Corp, Device Technol Div, Adv Device Technol Dept, Hitachinaka, Ibaraki 3128504, Japan;
Renesas Elect Corp, Device Technol Div, Adv Device Technol Dept, Hitachinaka, Ibaraki 3128504, Japan;
Renesas Elect Corp, Device Technol Div, Adv Device Technol Dept, Hitachinaka, Ibaraki 3128504, Japan;
Renesas Elect Corp, Device Technol Div, Adv Device Technol Dept, Hitachinaka, Ibaraki 3128504, Japan;
Renesas Elect Corp, Device Technol Div, Adv Device Technol Dept, Hitachinaka, Ibaraki 3128504, Japan;
Renesas Elect Corp, Device Technol Div, Adv Device Technol Dept, Hitachinaka, Ibaraki 3128504, Japan;
机译:负偏压温度不稳定性应力作用下氟注入对p沟道MOSFET恢复特性的影响
机译:HfMoN金属栅极和自对准氟离子注入对具有$ hbox {Gd} _ {2} hbox {O} _ {3} $栅极电介质的pMOSFET负偏压温度不稳定性的影响
机译:正偏置温度不稳定性中的负阈值电压漂移和掺钇的HfO_2栅介质的负偏置温度不稳定性的正阈值电压漂移的研究
机译:氟注入的LTPS薄膜晶体管P沟道的负偏置温度不稳定性
机译:SiGe PMOS器件上的总电离剂量辐射效应和负偏置温度不稳定性
机译:被动采样设备中DNA降解偏差对节肢动物群落及其相关微生物群的元条形码研究的影响
机译:CMOS器件中负偏压温度不稳定性的机理:氮的降解,恢复和影响