Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $hbox{Gd}_{2} hbox{O}_{3}$ Gate Dielectrics

摘要

The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal–oxide–semiconductor field-effect transistors with HfMoN metal gates and $hbox{Gd}_{2}hbox{O}_{3}$ gate dielectrics were investigated. The threshold voltage $V_{rm th}$ can be adjusted from $-$0.8 to $-$ 0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the $V_{rm th}$ shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.