Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

摘要

The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (a) rubrene gate insulator were investigated. We have confirmed that a-rubrene shows an insulating property, and its extracted linear mobility was 2.5 x 10(-2)cm(2)/(V.s). The gate length and width were 10 and 60 mu m, respectively. From these results, the OFET with a top-gate configuration utilizing an a-rubrene gate insulator is promising for the high-density integration of scaled OFETs. (C) 2018 The Japan Society of Applied Physics