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Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron

机译:块状硅铁的晶界结构和晶粒长大的温度依赖性

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Grain boundary shapes and grain growth in bulk 2.61 wt% silicon-iron have been studied by heat-treating at temperatures between 700 and 1200℃. Initial microstructure with fairly uniform fine grains has been obtained by recrystallization at 800℃ for 5 min after deformation. When subsequently heat-treated at 700 and 800℃, a fraction of the grain boundaries have hill-and-valley shapes with several facet planes or kinks. Some of these facet boundary segments are expected to be singular. Abnormal grain growth occurs at 700 and 800℃ and is attributed to step growth of the boundaries. When heat-treated at 1000℃, all grain boundaries are defaceted with smoothly curved shapes, indicating that they are atomically rough. At temperatures above 1000℃, normal grain growth occurs, because the rough grain boundaries move continuously. This correlation between grain boundary structure and grain growth is consistent with the earlier observations in other metals and oxides. It is thus shown that the abnormal grain growth in this alloy occurs at low temperatures because of the singular grain boundary structure.
机译:通过在700到1200℃之间的温度下进行热处理,研究了2.61 wt%的硅铁中的晶界形状和晶粒长大。变形后,在800℃下再结晶5分钟,可获得具有相当均匀的细晶粒的初始组织。随后在700和800℃下进行热处理时,一部分晶界呈丘陵和谷状,并带有多个小平面或扭结。这些小平面边界段中的某些应该是奇异的。晶粒的异常生长发生在700和800℃,这归因于边界的逐步生长。当在1000℃下进行热处理时,所有的晶界都以光滑弯曲的形状去污,表明它们是原子粗糙的。在1000℃以上的温度下,由于粗糙的晶界连续移动,所以晶粒正常生长。晶界结构与晶粒生长之间的这种相关性与其他金属和氧化物中的早期观察结果一致。因此表明,由于奇异的晶界结构,该合金在低温下发生了异常的晶粒长大。

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