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Abnormal Grain Growth in Bulk Cu - The Dependence on Initial Grain Size and Annealing Temperature

机译:大块铜中晶粒的异常生长-取决于初始晶粒尺寸和退火温度

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The dependence of abnormal grain growth (AGG), also termed secondary recrystallization, on annealing temperature in the range between 600 deg C and 1050 deg C has been observed in pure bulk Cu specimens compressed to various levels between 5 and 75 pct. There is no grain texture after annealing. The average grain size after primary recrystallization, which represents the initial grain size for secondary recrystallization during further annealing, decreases with increasing deformation and is nearly independent of the annealing temperature, in agreement with previous observations. The incubation time for AGG decreases and the number density of abnormally large grains increases with increasing deformation (hence, a decreasing initial grain size) and increasing annealing temperature. At low temperatures, most of the grain boundaries are faceted, with some facet planes probably of singular structures corresponding to cusps in the polar plots of the grain-boundary energy vs the grain-boundary normal. With increasing temperature, the grain boundaries become defaceted and, hence, atomically rough. The observed grain-growth behavior appears to be qualitatively consistent with the movement of faceted grain boundaries by two-dimensional nucleation of boundary steps. The temperature dependence appears to be consistent with roughening of grain boundaries. Before the onset of AGG, stagnant growth of the grains occurs at low rates, probably limited by slow two-dimensional nucleation of boundary steps, and, at low deformations and low annealing temperatures, the stagnant growth persists for 100 hours. The specimens with relatively small initial grain sizes (because of high deformation) show double AGG when annealed at high temperatures.
机译:在压缩至5至75 pct的各种水平的纯铜试样中,观察到异常晶粒生长(AGG)(也称为二次再结晶)对退火温度在600℃至1050℃之间的依赖性。退火后没有晶粒组织。与先前的观察结果一致,初次重结晶后的平均晶粒尺寸代表进一步退火期间二次重结晶的初始晶粒尺寸,随着变形的增加而减小,并且几乎与退火温度无关。随着变形的增加(因此,初始晶粒尺寸减小)和退火温度的升高,AGG的保温时间减少,异常大晶粒的数量密度增加。在低温下,大多数晶界都是刻面的,有些刻面可能是奇异结构,对应于晶界能量与晶界法线的极坐标图中的尖点。随着温度升高,晶界变污,因此原子上变得粗糙。通过边界台阶的二维成核,观察到的晶粒长大行为似乎与刻面晶界的运动在质量上是一致的。温度依赖性似乎与晶界的粗糙化相一致。在AGG发生之前,晶粒的停滞生长速率较低,可能受边界台阶的缓慢二维成核作用所限制,并且在低变形和低退火温度下,停滞生长持续100小时。初始晶粒尺寸相对较小(由于高变形)的试样在高温下退火时显示出两倍的AGG。

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