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机译:带梳状场板的4H-SiC肖特基势垒二极管的分析
Department of Electronic Engineering Sogang University;
4H-SiC; wide band gap; power device; trench oxide; edge termination; field plate; FP; electric field crowding; electric field distribution; breakdown voltage; impact ionisation;
机译:具有半绝缘多晶硅场板端接的4H-SiC肖特基势垒二极管
机译:4H-SiC肖特基势垒二极管,结屏障肖特基二极管和引脚二极管的温度传感性能比较
机译:P型Al / 4H-SiC肖特基势垒二极管屏障不均匀分析
机译:2.3 kV场垂直Ga
机译:分析砷化镓肖特基势垒二极管中的高频效应。
机译:具有4H-SIC肖特基二极管的60-700 k CTAT和PTAT温度传感器
机译:高能电子辐照对肖特基势垒高度和Ni / 4H-siC肖特基二极管的Richardson常数的影响