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机译:P型Al / 4H-SiC肖特基势垒二极管屏障不均匀分析
Thomas Johann Seebeck Department of Electronics Tallinn University of Technology Ehitajate tee 5 12616 Tallinn Estonia;
Thomas Johann Seebeck Department of Electronics Tallinn University of Technology Ehitajate tee 5 12616 Tallinn Estonia;
Thomas Johann Seebeck Department of Electronics Tallinn University of Technology Ehitajate tee 5 12616 Tallinn Estonia;
Thomas Johann Seebeck Department of Electronics Tallinn University of Technology Ehitajate tee 5 12616 Tallinn Estonia;
4H-SiC; Diffusion welding; SBD; TCAD; inhomogeneity; DLTS;
机译:钛4H-SiC肖特基势垒二极管势垒高度不均匀性的缺陷分析
机译:钛4H-SiC肖特基势垒二极管势垒高度不均匀性的缺陷分析
机译:后退火工艺可改善Ti / Al 4H-SiC肖特基势垒二极管中肖特基势垒高度的不均匀性
机译:P型AI / 4H-SIC肖特基势垒二极管屏障不均匀分析
机译:肖特基势垒二极管及其作为肖特基势垒电阻的应用
机译:GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
机译:阻挡不均匀性限制了基于GaN的纳米级肖特基势垒二极管中的电流和1 / f噪声传输