Harmonic distortion in laterally asymmetric channel metal-oxide-semiconductor field-effect transistors operating in the linear regime

摘要

A Monte Carlo investigation of the linear regime harmonic distortion in laterally asymmetric channel (LAC) and conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for radio frequency applications is presented. Simulations of nonlinearities are carried out both considering the Fourier analysis in AC conditions (at 5 and 20 GHz) and the integral function method. The results show a general good agreement between both modeling techniques, with the exception of the third harmonic distortion at the higher frequency, which is underestimated by the integral function method at low gate bias. A general improvement in the total harmonic distortion and second harmonic distortion is evidenced in LAC MOSFETs as compared to conventional devices. While the third harmonic distortion at low gate bias is slightly degraded in LAC transistors, at high VGS, the LAC MOSFET also improves this figure of merit as compared to conventional transistors, which confirms the suitability of LACs also for large-signal radio frequency applications. Copyright © 2013 John Wiley & Sons, Ltd.