Book Reviews

摘要

Research and development of silicon carbide (SiC) as semiconductor material has reached a critical stage. After the early commercialisation of SiC-Schottky diodes for high voltage, high power applications in 2001, there has been tremendous progress in crystal growth, defect control, and processing. First engineering models of three-terminal devices have become available; they are intended for active electrical power management in areas such as transportation and power conversion where efficiency and/or high temperature operation are of the essence.