首页> 外文期刊>International Journal of Microcircuits & Electronic Packaging >Eutectic Zn-Al Die Attachment for Higher T_j SiC Power Applications: Fabrication Method and Die Shear Strength Reliability
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Eutectic Zn-Al Die Attachment for Higher T_j SiC Power Applications: Fabrication Method and Die Shear Strength Reliability

机译:用于更高T_j SiC电源应用的共晶Zn-Al模具附件:制造方法和模具剪切强度的可靠性

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摘要

This paper comprehensively describes the fabrication method and shear strength reliability of a eutectic Zn-Al (m.p. = 382℃) attachment system, built by soldering SiC dice (2×2 mm~2) onto Cu foil active-metal-brazed with a SiN ceramic plate. Four essential soldering conditions are presented and discussed for the formation of a strong and reproducible attachment. Die shear strength reliability data at T_j = 250℃ are reported here for the first time. Storage tests at 250℃ revealed that, after an initial slight decline, the die shear strength stayed virtually constant at a sufficient level (~110 MPa) for at least 3,000 h. Thermal cycle test results indicated that the attachments can withstand thermal cycle stress for 3,000 cycles between - 40℃ and 250℃. The average die shear strength after 3,000 cycles was 18.5 MPa, a value that is three times higher than the IEC standard of 6.2 MPa specified in Document 60749-19.
机译:本文全面描述了通过将SiC晶粒(2×2 mm〜2)焊接到用SiN钎焊的铜箔上而构建的共晶Zn-Al(mp = 382℃)附着系统的制造方法和抗剪强度可靠性。陶瓷板。提出并讨论了四个基本焊接条件,以形成牢固且可复制的附件。首次报道了T_j = 250℃时的模切强度可靠性数据。在250℃下的储藏测试表明,在开始略微下降之后,模具剪切强度在至少3,000 h的水平(〜110 MPa)下几乎保持恒定。热循环测试结果表明,附件可以承受-40℃至250℃之间的3,000个循环的热循环应力。 3,000次循环后的平均模具剪切强度为18.5 MPa,是60749-19号文件中指定的6.2 MPa IEC标准的三倍。

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    Research Center, R&D Partnership for Future Power Electronics Technology (FUPET) c/o AIST, Tsukuba 305-8568, Japan,Nissan Research Center (YE0-NRC), Nissan Motor Co., Ltd., Yokosuka 237-8523, Japan;

    Research Center, R&D Partnership for Future Power Electronics Technology (FUPET) c/o AIST, Tsukuba 305-8568, Japan,Nissan Research Center (YE0-NRC), Nissan Motor Co., Ltd., Yokosuka 237-8523, Japan;

    Research Center, R&D Partnership for Future Power Electronics Technology (FUPET) c/o AIST, Tsukuba 305-8568, Japan,Nissan Research Center (YE0-NRC), Nissan Motor Co., Ltd., Yokosuka 237-8523, Japan;

    Research Center, R&D Partnership for Future Power Electronics Technology (FUPET) c/o AIST, Tsukuba 305-8568, Japan,Advanced Technology Development Division, Sanken Electric Co., Ltd., Saitama 352-8666, Japan;

    Research Center, R&D Partnership for Future Power Electronics Technology (FUPET) c/o AIST, Tsukuba 305-8568, Japan,Nissan Research Center (YE0-NRC), Nissan Motor Co., Ltd., Yokosuka 237-8523, Japan;

    Advanced Materials Division, Ome District Division, Sumitomo Metal Mining Co., Ltd., Tokyo 198-8601, Japan;

    Advanced Materials Division, Ome District Division, Sumitomo Metal Mining Co., Ltd., Tokyo 198-8601, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Au-Ge; ceramic substrate; die attachment; high temperature; power device; SiC;

    机译:金锗陶瓷基板模具连接;高温;动力装置;碳化硅;

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