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Reliability of sintered Ag_(80)-Al_(20)die attach nanopaste for high temperature applications on SiC power devices

机译:SiC功率器件上高温应用的烧结Ag_(80)-Al_(20)贴片纳米糊的可靠性

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摘要

The aim of this research work is to present a reliability analysis on the suitability of the Ag_(80)-Al_(20) sintered die attach nanopaste for high temperature applications on SiC power devices. Die back metallization studies pointed out that Ag and Au would be suitable candidates to form a strong bond between the SiC die and Ag_(80)-Al_(20) die attach for high temperature operations. The post-sintered Ag_(80)-Al_(20) die attach revealed a low modulus of elasticity at 9.8 GPa due to the formation of micro-pores during sintering. This also influenced the hardness and stiffness as well at 0.49 GPa and 30354.14 N/m, respectively. The electrical conductivity of the Ag_(80)-Al_(20) die attach material decreased slightly with increasing thermal aging repetitions. As the die attach material aged, it seemed to undergo a reduction in electrical performance, though as shown earlier the structure was still intact. This decomposition was suggested to occur due to the organic-metallic system's composition itself, and the volatility of the residue organics.
机译:这项研究工作的目的是针对Ag_(80)-Al_(20)烧结管芯附着纳米糊在SiC功率器件上高温应用的适用性进行可靠性分析。模背金属化研究指出,对于高温操作,Ag和Au将适合在SiC模头与Ag_(80)-Al_(20)模头连接件之间形成牢固的结合。烧结后的Ag_(80)-Al_(20)芯片附着显示出9.8 GPa的低弹性模量,这是由于在烧结过程中形成了微孔。这也分别影响了硬度和刚度,分别为0.49 GPa和30354.14 N / m。随着热老化重复次数的增加,Ag_(80)-Al_(20)芯片附着材料的电导率略有下降。随着管芯连接材料的老化,它的电气性能似乎有所下降,尽管如前所述,该结构仍然完好无损。由于有机金属系统本身的组成以及残留有机物的挥发性,建议发生这种分解。

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  • 来源
    《Microelectronics & Reliability》 |2013年第3期|473-480|共8页
  • 作者单位

    Energy Efficient & Sustainable Semiconductor Research Croup, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia;

    Energy Efficient & Sustainable Semiconductor Research Croup, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia;

    Energy Efficient & Sustainable Semiconductor Research Croup, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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