Simple and fast simulation approach to investigate the NBTI effect on suspended gate MOS devices

摘要

In this paper, we investigate the negative bias temperature instability (NBTI) on conventional P-type metal-oxide-semiconductor field effect transistors (PMOSFET) using on-fly bulk trap technique (OTFBT). The extracted NBTI induced interface (△N_(it)) and oxide traps (△N_(ot)), using OTFBT, are modelled and used to simulate the NBTI effect on N-type suspended gate metal-oxide-semiconductor devices (N-type SG-MOS), which could be manufactured by the same fabrication process as conventional PMOSFET. The used approach to simulate the NBTI effect is performed by combining, in the same simulation program, the N-type SG-MOS devices model with the NBTI induced △N_(it) and △N_(ot) models. This approach allowed us to simulate and predict rapidly the lifetime of the N-type SG-MOS devices subjected to the NBTI degradation. The simulation shows that the degradation of N-type SG-MOS devices due to the NBTI is the same as that of conventional PMOSFET. However, the extracted lifetime of N-type SG-MOS devices (stiction of the suspended gate) is longer than that of conventional PMOSFET.