An analytical approach to model manufacturing a drift heterobipolar transistors: On approach to optimize technological process to increase integration rate

摘要

In this paper, we introduce an approach to increase integration rate of drift heterobipolar transistors. The approach is based on manufacturing of heterostructure with spatial configuration, doping of required areas of the heterostructure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.